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PN3645 Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
PN3645
Fairchild
Fairchild Semiconductor Fairchild
PN3645 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
60
V
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICES
Collector-Cutoff Current
IBL
Base-Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 65°C
VCE = 50 V, IC = 0
35
nA
2.0
µA
35
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
VCE = 2.0 V, IC = 300 mA
VCE = 1.0 V, IC = 50 mA
IC = 50 mA, IB = 2.5 mA
IC = 150 mA, IB = 15 mA
IC = 50 mA, IB = 2.5 mA
IC = 150 mA, IB = 15 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small-Signal Current Gain
VCB = 10 V, f = 140 kHz
VBE = 0.5 V, f = 140 kHz
IC = 20 mA, VCE = 20 V,
f = 100 MHz
40
80
100
100
300
20
80
240
0.25
V
0.4
V
1.0
V
1.3
V
8.0
pF
35
pF
2.0
SWITCHING CHARACTERISTICS
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 30 V, IC = 300 mA,
IB1 = 30 mA
VCC = 30 V, IC = 300 mA
IB1 = I B2 = 30 mA
40
ns
25
ns
35
ns
100
ns
70
ns
50
ns

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