DMG3420UQ-7 Просмотр технического описания (PDF) - ZP Semiconductor
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DMG3420UQ-7 Datasheet PDF : 2 Pages
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DMG3420U
N-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (Note 6)
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
20
±12
5.47
3.43
20
Value
0.74
167
-55 to +150
Units
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
20
IDSS
—
IGSS
—
—
—
—
1.0
—
±100
VGS(th)
0.5
0.95
1.2
21
29
25
35
RDS(ON)
—
34
48
65
91
|Yfs|
—
9
—
VSD
—
0.75
1.0
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
— 434.7 —
—
69.1
—
—
61.2
—
—
1.53
—
—
5.4
—
—
0.9
—
—
1.5
—
—
6.5
—
—
8.3
—
—
21.6
—
—
5.3
—
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V
VGS = 0V, ID = 250μA
µA VDS = 20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6A
mΩ VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
VGS = 1.8V, ID = 2A
S
VDS = 5V, ID = 3.8A
V
VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 10V,
nC
ID = 6A
ns
ns VDD = 10V, VGS = 5V,
ns RL = 1.7Ω, RG = 6Ω
ns
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