DMG3414U Просмотр технического описания (PDF) - ZP Semiconductor
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DMG3414U Datasheet PDF : 2 Pages
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DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
TJ = 25°C
Symbol Min
BVDSS
20
IDSS
⎯
IGSS
⎯
VGS(th)
0.5
Static Drain-Source On-Resistance
RDS (ON)
⎯
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Typ
⎯
⎯
⎯
⎯
19
22
28
7
829.9
85.3
81.2
9.6
1.5
3.5
8.1
8.3
40.1
9.6
Max
⎯
1.0
±100
0.9
25
29
37
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
mΩ VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
S VDS = 10V, ID = 4A
pF
pF VDS = 10V, VGS = 0V
f = 1.0MHz
pF
nC
nC VGS = 4.5V, VDS = 10V, ID = 8.2A
nC
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 10Ω, RG = 6Ω, ID = 1A
ns
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