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M74VHC1GT125DT1G(2018) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
M74VHC1GT125DT1G
(Rev.:2018)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
M74VHC1GT125DT1G Datasheet PDF : 16 Pages
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MC74VHC1G125, MC74VHC1GT125
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25°C
Symbol
Parameter
Conditions VCC (V) Min Typ Max
tPLH, Propagation Delay, CL = 15 pF 3.0 to 3.6 4.5 8.0
tPHL A to Y
(Figures 3 and 4)
CL = 50 pF
6.4 11.5
CL = 15 pF 4.5 to 5.5 3.5 5.5
CL = 50 pF
4.5 7.5
tPZL,
tPZH
Output Enable
Time, OE to Y
(Figures 3 and 4)
CL = 15 pF 3.0 to 3.6 4.5 8.0
CL = 50 pF
6.4 11.5
CL = 15 pF 4.5 to 5.5 3.5 5.1
CL = 50 pF
4.5 7.1
tPLZ,
tPHZ
Output Disable
Time, OE to Y
(Figures 3 and 4)
CL = 15 pF 3.0 to 3.6 6.5 9.7
CL = 50 pF
8.0 13.2
CL = 15 pF 4.5 to 5.5 4.8 6.8
CL = 50 pF
7.0 8.8
CIN Input Capacitance
4.0 10
COUT
Output Capacitance
Output in
High
Impedance
State
6.0
40°C TA 85°C
Min
Max
9.5
13.0
6.5
8.5
9.5
13.0
6.0
8.0
11.5
15.0
8.0
10.0
10
55°C TA 125°C
Min
Max Unit
12.0
ns
16.0
8.5
10.5
11.5
ns
15.0
8.5
10.5
14.5
ns
18.0
10.0
12.0
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the noload dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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