APTM100H18FG Просмотр технического описания (PDF) - Microsemi Corporation
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APTM100H18FG Datasheet PDF : 7 Pages
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APTM100H18FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.9
0.14
0.12
0.7
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.02 0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
120
VGS=15, 10&8V
7V
100
80
6.5V
60
40
20
0
0
6V
5.5V
5V
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
RDS(on) vs Drain Current
1.4
Normalized to
1.3 VGS=10V @ 21.5A
1.2
VGS=10V
1.1
1
VGS=20V
0.9
0.8
0
20 40 60 80 100 120
ID, Drain Current (A)
160
140
120
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
TJ=25°C
20
TJ=125°C
0
TJ=-55°C
0123456789
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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4–7
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