APTM100H18FG Просмотр технического описания (PDF) - Microsemi Corporation
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APTM100H18FG Datasheet PDF : 7 Pages
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APTM100H18FG
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 180m typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
Q1
G1
Application
VBUS
Q3
G3
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
S1
Q2
G2
S2
Q4
S3
Features
G4
S4
0/VBUS
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1000
V
Tc = 25°C
43
Tc = 80°C
33
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30
V
210
m
PD Maximum Power Dissipation
Tc = 25°C
780
W
IAR Avalanche current (repetitive and non repetitive)
25
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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