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PL611S-02 Просмотр технического описания (PDF) - Microchip Technology

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PL611S-02 Datasheet PDF : 20 Pages
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PL611S-02
TABLE 1-2: AC SPECIFICATIONS (CONTINUED)
Parameters
Symbol Min.
Typ.
Max.
Output Enable Time
10
VDD Sensitivity
Output Rise Time
2
–2
2
1.2
1.7
Output Fall Time
1.2
1.7
45
50
55
Duty Cycle
45
50
55
40
60
Period Jitter, Pk-to-Pk
(Note 1)
(10,000 samples measured)
70
Note 1: Jitter performance depends on the programming parameters.
Units
ns
ms
ppm
ns
ns
%
Conditions
OE Function; TA =25°C,
15 pF Load. Add one
clock period to this measure-
ment for a usable
clock output.
PDB Function; TA =25°C,
15 pF Load
Frequency vs. VDD ±10%
15 pF Load, 10/90% VDD,
High Drive, 3.3V
15 pF Load, 90/10% VDD,
High Drive, 3.3V
@2.5V and 3.3V over entire
frequency range, VDD/2
@1.8V, 75 MHz FOUT,
VDD/2
@1.8V, 75 MHz < FOUT
110 MHz
ps
With capacitive decoupling
between VDD and GND
TABLE 1-3: CRYSTAL SPECIFICATIONS
Parameters
Symbol
Min
Typ
Max
Units
Fundamental Crystal Resonator Frequency
FXIN
10
Crystal Loading Rating
(The IC can be programmed for any value in this CL (xtal)
8
range)
Maximum Sustainable Drive Level
Operating Drive Level
Shunt Capacitance
C0
Metal Can Crystal
ESR Max
ESR
Shunt Capacitance
C0
Small SMD Crystal
ESR Max
ESR
50
MHz
12
pF
100
μW
30
μW
5.5
pF
50
Ω
2.5
pF
80
Ω
2016 Microchip Technology Inc.
DS20005670A-page 5

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