PACDN006(2010) Просмотр технического описания (PDF) - ON Semiconductor

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производитель

PACDN006
(Rev.:2010)

6-Channel ESD Protection Array

ON Semiconductor 

PACDN006

STANDARD OPERATING CONDITIONS

PARAMETER

Operating Temperature Range

Operating Supply Voltage (V - V )

P

N

RATING

-40 to +85

0 to 5.5

UNITS

°C

V

ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)

SYMBOL PARAMETER

CONDITIONS

IP

Supply Current

(VP-VN)=5.5V

VF

Diode Forward Voltage

IF = 20mA

VESD

ESD Protection

Peak Discharge Voltage at any channel Note 2

input, in system

a) Human Body Model, MIL-STD-883, Note 3

Method 3015

b) Contact Discharge per IEC 61000-4- Note 4

2

Note 4

c) Air Discharge per IEC 61000-4-2

V

Channel Clamp Voltage

CL

Positive Transients

Negative Transients

@15kV ESD HBM

ILEAK

Channel Leakage Current

CIN

Channel Input Capacitance

@ 1 MHz, VP=5V, VN=0V,

V =2.5V

IN

MIN TYP

0.65

MAX

10

0.95

UNITS

μA

V

+15

kV

+8

kV

+15

kV

V + 13.0

V

P

V - 13.0

V

N

+0.1

+1.0

μA

3

5

pF

Note 1: All parameters specified at TA=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted.

Note 2: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for

more details).

Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded.

Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 5.0V, VN grounded.

Rev. 4 | Page 4 of 9 | www.onsemi.com

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