APL502B2G Просмотр технического описания (PDF) - Microsemi Corporation

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производитель

APL502B2G

LINEAR MOSFET

Microsemi Corporation 

DYNAMIC CHARACTERISTICS

Symbol

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

THERMAL CHARACTERISTICS

Symbol Characteristic

RqJC Junction to Case

WT Package Weight

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 15V

VDD = 250V

ID = 29A @ 25°C

RG = 0.6W

APL502B2_L(G)

MIN TYP MAX UNIT

7485 9000

1290 1810 pF

617 930

13

26

27

54

ns

56

84

16

20

MIN TYP MAX UNIT

.17 °C/W

0.22

oz

5.9

g

1 Repetitive Rating: Pulse width limited by maximum junction

temperature.

2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

0.18

0.16

D = 0.9

0.14

0.12

0.7

0.10

0.5

0.08

0.06

0.3

0.04

0.02

0.1

0.05

0

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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