BFX87 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BFX87

SILICON PLANAR EPITAXIAL TRANSISTORS

New Jersey Semiconductor 

^emi-Conaucko'i iPioducti, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

BFX87

BFX88

SILICON PLANAR EPITAXIAL TRANSISTORS

PNP transistors in TO-39 metal envelopes for general industrial applications.

QUICK REFERENCE DATA

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (peak value)

Total power dissipation up to Tamb = 25 °C

DC current gain

-lc= 10mA; -VCE- 10V

Transition frequency at f = 100 MHz

~lc - 50 mA; -VCE = 10 V

MECHANICAL DATA

Fig.1 TO-39.

-VCBO

-VCEO

-'CM

ptot

HFE

fT

BFX87

max. 50

max. 50

max. 600

max. 600

min.

tVP. 125

BFX88

40 V

40 V

600 mA

600 mW

125

min. 100

100 MHz

Dimensions in mm

Collector connected to case

t

8.S

max

1

"L 6.6

max

Maximum lead diameter is guaranteed only for 12.7 mm.

NJ Semi-Conductors reserves the right to change test condidons. parameters limits and package dimensions without

notice information famished by NJ Semi-Conductors is believed to be both accurate and reliableat the time ofgoing to

press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ

Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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