BFT29 Просмотр технического описания (PDF) - TT Electronics.
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BFT29 Datasheet PDF : 3 Pages
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SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA
IE = 0
BFT29
BFT30
BFT31
V(BR)CEO(1)
Collector-Emitter Breakdown
Voltage
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector-Cut-Off Current
IC = 10mA
IB = 0
BFT29
BFT30
BFT31
IE = 10µA
IC = 0
VCB = Rated VCEO, IE = 0
IC = 1.0mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 10mA
VCE = 10V
BFT29
BFT30
BFT31
hFE(1)
Forward-Current Transfer Ratio
IC = 100mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 500mA
VCE = 10V
BFT29
BFT30
BFT31
IC = 1.0A
VCE = 10V
BFT29
BFT30
BFT31
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
VBE(sat)(1)
Base-Emitter Saturation Voltage
IC = 500mA
IB = 50mA
IC = 1.0A
IB = 100mA
IC = 500mA
IC = 1.0A
BFT29
BFT30
BFT31
BFT29
BFT30
BFT31
IB = 50mA
IB = 100mA
Min.
90
70
60
80
60
50
5
25
45
45
30
50
50
50
75
100
30
50
50
20
25
25
Typ.
Max.
100
250
250
300
0.95
0.75
0.75
1.6
1.0
1.0
1.1
2.0
Units
V
V
V
nA
V
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8963
Website: http://www.semelab-tt.com
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