5LP01C Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

5LP01C

P-Channel Small Signal MOSFET

ON Semiconductor 

5LP01C

Electrical Characteristics at Ta=25°C

Parameter

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID= --1mA, VGS=0V

VDS= --50V, VGS=0V

VGS=±8V, VDS=0V

VDS= --10V, ID= --100μA

VDS= --10V, ID= --40mA

ID= --40mA, VGS= --4V

ID= --20mA, VGS= --2.5V

ID= --5mA, VGS= --1.5V

VDS= --10V, f=1MHz

See specified Test Circuit.

VDS= --10V, VGS= --10V, ID= --70mA

IS= --70mA, VGS=0V

Switching Time Test Circuit

VIN

0V

--4V

VIN

PW=10μs

D.C.≤1%

G

VDD= --25V

ID= --40mA

RL=625Ω

D

VOUT

5LP01C

P.G

50Ω

S

Ratings

Unit

min

typ

max

--50

V

--1

μA

±10

μA

--0.4

--1.4

V

70

100

mS

18

23

Ω

20

28

Ω

30

60

Ω

7.4

pF

4.2

pF

1.3

pF

20

ns

35

ns

160

ns

150

ns

1.40

nC

0.16

nC

0.23

nC

--0.85

--1.2

V

No.6619-2/6

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