D44H11 Просмотр технического описания (PDF) - Inchange Semiconductor
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D44H11 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IC= 8A ;IB= 0.8 A
VCE=Rated VCEO; VBE= 0
1.5
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
60
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
40
COB
Output Capacitance
VCB= 10V,f= 1.0MHz
130
pF
fT
Current-Gain—Bandwidth Product IC=0.5A;VCE= 10V;ftest=20MHz
50
MHz
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