SLVU2.8 Просмотр технического описания (PDF) - Semtech Corporation

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производитель

SLVU2.8

Low Voltage EPD TVS Diode For ESD and Latch-Up Protection

Semtech Corporation 

SLVU2.8

PROTECTION PRODUCTS

Absolute Maximum Rating

Rating

Peak Pulse Power (tp = 8/20μs)

Peak Pulse Current (tp = 8/20μs)

Lead Soldering Temperature

Operating Temperature

Storage Temperature

Symbol

Ppk

IPP

TL

TJ

TSTG

Value

400

24

260 (10 seconds)

-55 to +125

-55 to +150

Units

Watts

A

oC

oC

oC

Electrical Characteristics

SLVU2.8

Parameter

Reverse Stand-Off Voltage

Punch-Through Voltage

Snap-Back Voltage

Reverse Leakage Current

Symbol

VRWM

VPT

VSB

IR

Clamping Voltage

V

C

Clamping Voltage

VC

Clamping Voltage

VC

Clamping Voltage

VC

Clamping Voltage

VC

Junction Capacitance

Cj

Junction Capacitance

Cj

Steering Diode Characteristics

Reverse Breakdown Voltage

VBR

Reverse Leakage Current

IRD

Forward Voltage

VF

© 2008 Semtech Corp.

Conditions

Pin 3 to 1 or Pin 2 to 1

IPT = 2μA, Pin 3 to 1

ISB = 50mA, Pin 3 to 1

VRWM = 2.8V, T=25°C

Pin 3 to 1 or Pin 2 to 1

I = 2A, t = 8/20μs

PP

p

Pin 3 to 1

IPP = 5A, tp = 8/20μs

Pin 3 to 1

IPP = 24A, tp = 8/20μs

Pin 3 to 1

IPP = 5A, tp = 8/20μs

Pin 2 to 1

IPP = 24A, tp = 8/20μs

Pin 2 to 1

Pin 3 to 1 and 2

(Pin 1 and 2 tied

together)

VR = 0V, f = 1MHz

Pin 2 to 1 (pin 3 N.C.)

VR = 0V, f = 1MHz

Minimum

3.0

2.8

IT= 10μA, Pin 3 to 2

40

VRWM = 2.8V, T=25°C

Pin 3 to 2

IF= 1A, Pin 2 to 3

2

Typical

70

5

Maximum

2.8

1

Units

V

V

V

μA

3.9

V

7

V

12.5

V

8.5

V

15

V

100

pF

10

pF

V

1

μA

2

V

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