SDM4410 Просмотр технического описания (PDF) - Samhop Mircroelectronics

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производитель

SDM4410

N-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics 

S DM4410

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =1.7A

Min TypC Max Unit

5

0.75 1.2 V

Notes

a.S urface Mounted on FR 4 Board, t 10sec.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

c.Guaranteed by design, not subject to production testing.

20

V GS =3V

16

V GS =6V

12

V GS =10V

8

V GS =2.5V

4

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

3000

2500

2000

C is s

1500

1000

C oss

500

C rss

0

0 5 10 15 20 25 30

V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

20

-55 C

15

10

T j=125 C

5

25 C

0

0

1 1.5

2 2.5 3 3.5

V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1.6

V G S =10V

1.4

ID=9A

1.2

1.0

0.8

0.6

0.4

-55

-25 0 25 50 75 100 125

T j( C )

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

3

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