DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SDM4410 Просмотр технического описания (PDF) - Samhop Mircroelectronics

Номер в каталоге
Компоненты Описание
производитель
SDM4410 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
S DM4410
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min TypC Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
30
IDSS
VDS =24V, VGS =0V
IGSS
VGS = 16V, VDS =0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID = 9A
VGS =4.5V, ID= 5A
9 13.5 m ohm
11 20 m ohm
On-S tate Drain Current
ID(ON) VDS = 10V, VGS = 10V 20
A
Forward Transconductance
gFS
VDS = 10V, ID =9A
24
S
DYNAMIC CHARACTERISTICS c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =15V, VGS = 0V
f =1.0MHZ
1290
PF
280
PF
180
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VDD = 15V
tr
ID = 1A
VGS = 10V
tD(OFF) R GEN = 6 ohm
18
ns
24
ns
52
ns
Fall Time
tf
23
ns
Total Gate Charge
Qg VDS =10V, ID = 9A,VGS =10V
30.6
nC
VDS =10V, ID = 9A,VGS =4.5V
14.5
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs
VDS =10V, ID = 9A
Qgd
VGS =10V
3
nC
6.8
nC
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]