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S1AB Просмотр технического описания (PDF) - Taiwan Memory Technology

Номер в каталоге
Компоненты Описание
производитель
S1AB
TMT
Taiwan Memory Technology TMT
S1AB Datasheet PDF : 4 Pages
1 2 3 4
S1AB - S1MB
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
S1xB
(Note 1)
PART NO.
SUFFIX
H
PACKING
CODE
R5
R4
M4
PACKING CODE
SUFFIX (*)
G
Note 1: "x" defines voltage from 50V (S1AB) to 1000V (S1MB)
*: Optional available
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N PART NO.
S1MBHR5G
S1MB
PART NO.
SUFFIX
H
PACKING CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
1.2
1
0.8
0.6
0.4
Resistive or
inductive load
0.2
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (°C)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
TJ=125°C
1
0.1
TJ=75°C
0.01
TJ=25°C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
8.3ms single half sine wave
10
10
1
Pulse width=300μs
1% duty cycle
1
0.1
1
10
100
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
Version: G1511

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