1N4151-1 Просмотр технического описания (PDF) - Microsemi Corporation
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1N4151-1 Datasheet PDF : 3 Pages
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1N4149-1,51-1,54-1 &
1N4446-1 – 1N4449-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass package.
• TERMINALS: Tin/lead plated or RoHS compliant matte-tin over copper clad steel solderable per MIL-STD-750, method 2026.
• POLARITY: Cathode indicated by band.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 0.2 grams.
• See Package Dimensions on last page.
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
MSP (reference JANS)
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
MQ 1N4149 -1 (e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Metallurgically Bonded
Symbol
IR
IO
trr
VF
VR
VRWM
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
Type
1N4149-1
1N4151-1
1N4154-1
1N4446-1
1N4447-1
1N4448-1
1N4449-1
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted
Working
Peak
Reverse
Voltage
VRWM
75
75
35
75
75
75
75
Forward Voltage
VF
@ 10 mA
1.0
-
-
-
-
-
-
@ 20 mA
-
-
-
1.0
1.0
-
-
@ 30 mA
-
-
1.0
-
-
-
1.0
@ 50 mA
-
1.0
-
-
-
-
-
@ 100 mA
-
-
-
-
-
1.0
-
Reverse
Current
IR @ VR
V nA
20 25
50 50
25 100
20 25
20 25
20 25
20 25
Reverse
Current
@ 150 oC
IR @ VR
V µA
20 50
50 50
25 100
20 50
20 50
20 50
20 50
Junction
Capacitance
CJ
@0V
Reverse
Recovery
Time
trr
4 pF
4 ns
4 pF
2 ns
4 pF
2 ns
4 pF
4 ns
4 pF
4 ns
4 pF
4 ns
2 pF
4 ns
T4-LDS-0239, Rev. 1 (112021)
©2011 Microsemi Corporation
Page 2 of 3
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