MPSA94L-AB3-K(2019) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

MPSA94L-AB3-K
(Rev.:2019)

HIGH VOLTAGE TRANSISTOR

Unisonic Technologies 

MPSA94

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-6

V

Collector Power Dissipation(TA=25°С)

SOT-89

TO-92

PD

500

mW

625

mW

Collector Current

IC

-300

mA

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-40 ~ +150

°С

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC=-100μA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO IC=-1mA, IB=0

Collector-Emitter Breakdown Voltage

BVCES IC=-100μA, VBE=0

Emitter-Base Breakdown Voltage

BVEBO IE=-100μA, IC=0

Collector Cut-off Current

ICBO

VCB=-300V, IE=0

Collector Cut-off Current

ICES

VCE =-400V, VBE=0

Emitter Cut-off Current

IEBO

VEB=-4V, IC=0

VCE=-10V, IC=-1mA

DC Current Gain(note)

hFE

VCE=-10V, IC=-10mA

VCE=-10V, IC=-50mA

VCE=-10V, IC=-100mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

Base-Emitter Saturation Voltage

VBE(SAT) IC=-10mA, IB=-1mA

Output Capacitance

Cob

VCB=-20V, IE=0, f=1MHz

Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%.

MIN TYP MAX UNIT

-400

V

-400

V

-400

V

-5

V

-100 nA

-1 μA

100 nA

60

70

70

300

40

-0.20

-0.5

V

-0.75 V

7 pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R201-021.E

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