D45VH10_ Просмотр технического описания (PDF) - New Jersey Semiconductor
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D45VH10_ Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
D0201YR DIAC
The 00201 bidirectional trigger diode
is a low cost PNPN element suitable
for triggering TRIAC's. These parts are
fabricated using TAG'S high perfor-
mance glassivated process and are in-
tended for high volume applications.
DO 35
Absolute Maximum Ratings TA—25 °C unless otherwise noted
Parameter
Part Nr.
Break-Over Voltage D0201YR
Peak Current
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol Min.
VBO 29
IP
Tj
-4O
Tstg -40
Tsld
Nom. Max. Unit
32
35
V
2
A
125 °C
125 °c
250 °c
Electrical Characteristics
Parameter
Break-Over Voltage Symmetry
Break-Over Current
Peak Output Voltage
TA = 25°C unless otherwise noted
Symbol
AVeo
IBO
Vp
Min.
5
Max. Unit
3
V
50 pA
V
Test Conditions
10 ps pulse, 120 Hz repetition Figure 2
1.6 mm from case, 10s max.
Test Conditions
CT=27 nFsee Figure 3
CT = 0.1 pF see Figure 3
Figure 1
Figure 2
Voltage
Breakover
Voltage
V(BO)
1 f ^^^
^«— — _
U
O1
_^_^
l|—j— Breakover
^^^^ • 11 Current
>y /
I(BO)
-V(BO)
V:
+ V(BO)
O ' /^\
-V(BO)
\J=^-
~|
1
. -IP
Figure 3
HT
^ D0201YR
T oV^ f-o—W—o—
_CT RL : VP
20Q"
O
4
I
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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