D45VH10_ Просмотр технического описания (PDF) - New Jersey Semiconductor
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D45VH10_ Datasheet PDF : 3 Pages
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D44VH10 (NPN), D45VH10 (PNP)
ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage (Note 2 '
. ,; = 25 mAdc. IB = 0)
VcEOfsus)
80
-
-
Collector-Emitter Cutoff Current
(VCE = Rated VCEy. VBE.0~, = 4.0Vdc)
(VCE = Rated VCEV. VBE:0"; = 4.0 Vdc. ~c = 100 C>
Emitter Base Cutoff Current
iV== = 7.0 Vdc. :c = 0)
ICEV
Adc
-
-
10
-
-
100
'EBC
-
-
10
Adc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(lc = 2.0 Adc. VCE= 1.0 Vdc)
= 4.0 Adc. VCE= 1.0Vdc)
hpE
35
-
-
20
Collector- Emitter Saturation Voltage
(lc = 8.0 Adc. IB = 0.4 Adc)
• : = 8.0 Adc, IB = 0.8 Adc)
(lc = 15 Adc, IB = 3.0 Adc. ^c = 100 C)
D44VH10
D45VH10
D44VH10
D45VH10
Vdc
0.4
-
-
1.0
0.8
1.5
Base-Emitter Saturation Voltage
(lc = 8.0 Adc, IB = 0.4 Adc)
(lc = 8.0 Adc. IB = 0.8 Adc)
; = 8.0 Adc. IB = 0.4 Adc, ~c = 100 C)
c = 8.0 Adc. IB = 0.8 Adc. Tc = 1CK "
VBE:SS!
D44VH1 0
-
D45VH10
D44VH10
D45VH1 0
Vdc
1.2
1.0
-
1.1
1.5
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 0.1 Adc. VCE = 10 Vdc. f = 20 MHz'.
f-
-
5:
-
MHz
Output Capacitance
(VCB = 10 Vdc, I- = 0 W = LOMHzi
-
D44VH10
D45VH10
-
120
-
275
SWITCHING CHARACTERISTICS
Delay Time
Rise ~ime
Storage Time
(Vcc = 20 Vdc. lc = 8.0 Adc.
IB- = iB2 = 0.8 Adc)
Fall ~ime
2. Pulse Test: Pulse Width 300 s. Duty Cycle 2°o.
ta
-
-
50
tr
-
-
250
is
-
-
700
•'
-
90
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