TIC246N Просмотр технического описания (PDF) - Power Innovations
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TIC246N Datasheet PDF : 5 Pages
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TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IL
dv/dt
Latching current
Critical rate of rise of
off-state voltage
Vsupply = +12 V†
Vsupply = -12 V†
VD = Rated VD
(see Note 5)
IG = 0
TC = 110°C
80
-80
±400
mA
V/µs
dv/dt(c)
di/dt
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
VD = Rated VD
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
diG/dt = 50 mA/µs
IGT = 50 mA
TC = 80°C
IT = 1.4 IT(RMS)
TC = 110°C
±1.2 ±9
±100
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.9 °C/W
62.5 °C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
1000
CASE TEMPERATURE
TC08AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
10
TC08AB
100
10
1
1
Vsupply IGTM
++
+-
--
-+
0·1
-60 -40 -20 0
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
Vsupply IGTM
} + +
+-
--
-+
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
2
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