TIP526 Просмотр технического описания (PDF) - New Jersey Semiconductor
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TIP526 Datasheet PDF : 2 Pages
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TYPES TIP525, TIP526
N-P-N SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V|BR)cEO Collector-Emitter Breakdown Voltage
'CEO
Collector Cutoff Cu-rent
ICES
Collector Cutoff Cu 'rent
'EBO
Emitter Cutoff Current
hpg
Static Forward Current Transfer Ratio
VBE
Base-Emitter Voltage
vCE(sat) Collector-Emitter Seturation Voltage
rife
ii
IhfJ
Small-Signal Common-Emitter
Forward Current Transfer Ratio
Small-Signal Common-Emitter
Forward Current Transfer Ratio
TEST CONDITIONS
IQ = 30mA.
IB-O.
VCE * 100 v, iB - o
VCE = 25ov, V B E - O
See Note 5
VCE -125V, V g e - 0 .
TC=150°C
VEB = 5 V ,
IC-0
VEB-6V.
VCE-4V,
IC-0
IC-2.5A.
See Notes 6 and 6
VCE = 4 v.
Ic = 5 A-
See Notes 5 and 6
VCE"4V.
IB = 0.25 A,
'c = 5A.
See Notes 5 and 6
lc = 2 , 5 A , See Notes 5 and 6
lg-0.5A.
lc = SA.
See Notes 5 and 6
MIN
200
30
20
VCE-SV, IC-O.&A, f=ikHz
30
Vc£-5V,
IC = 0.5A, f = 5MHz
8
MAX
500
1
2
100
1
150
UNIT
V
MA
mA
**A
mA
1.5 V
1.2
V
2
NOTES: 5. These parameters mt *i be measuf ftd uting pu Ise techniques. tw = 3QO ^*, duty cycle <2%.
6. Thaw paramftlarf ar« rn«4»ured with voltage-sensing contacts separate from tha current carrying contacts and located within 0,125
inch from the device body.
thermal characteristics
R»JC^
RSJA
PARAMETER
Junction-to-CaseThi»rmal Resistance
Junction-to-Free-Air Thermal Resistance
TIPS25
MAX
1.67
43.8
TIP526
MAX
1.67
50
UNIT
°C/W
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