HI5828 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

HI5828

12-Bit, 130MSPS, Dual High Speed CMOS D/A (2.7V-5.5V)

Renesas Electronics 

HI5828

Typical Applications Circuit

48 47 46 45 44 43 42 41 40 39 38 37

ID5

1

36

QD4

ID4

ID3

ID2

ID1

ID0 (LSB)

DVPP

C1

0.1F

SLEEP

C2

0.1F

ICOMP2

2

35

3

34

4

33

5

32

6

31

7 N.C.

30

8 N.C.

29

9

CLK 28

10 DVDD

11 AGND

DGND 27

AGND 26

1213

14

15

16

17

18

19

20

21

22

23

25

24

QD5

QD6

QD7

QD8

QD9

QD10

QD11 (MSB)

QCOMP2

C3

0.1F

R1

50

AVPP

AVDD

AVDD

AVPP

C4

0.1F

C6

0.1F

C5

0.1F

ICOMP1

C7

0.1F

AVPP

R2 R3

50 50

RSET

1.91k

QCOMP1

R4 R5

50 50

C8

0.1F

AVPP

CONN 1

(IOUTA)

CONN2

(IOUTB)

CONN 3

(QOUTB)

CONN 4

(QOUTA)

+5V OR +3V POWER SOURCE

+ C11

10F

BEAD

FERRITE

L1

10H

+ C14

10F

FERRITE

BEAD

L2

10H

C9

0.1F

DVP-P (DIGITAL POWER PLANE)

C10

1F

C12

0.1F

AVP-P (ANALOG POWER PLANE)

C13

1F

NOTE: Separate analog and digital grounds should be used, in which case the grounds should be tied together at a single point near the device.

The analog and digital grounds should be connected together by a thin single trace and never connected together by an inductor.

FN4658 Rev 3.00

April 2001

Page 3 of 12

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