BCW60A Просмотр технического описания (PDF) - Continental Device India Limited

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производитель

BCW60A

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

BCW60A BCW60B

BCW60C BCW60D

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–emitter voltage (VBE = 0)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

Collector current (d.c.)

Base current

Total power dissipation up to Tamb: 25 °C

Storage temperature

Junction temperature

VCES

VCE0

VEB0

IC

IB

Ptot

Tstg

Tj

max. 32 V

max. 32 V

max. 5 V

max. 200 mA

max. 50 mA

max. 250 mW

–55 to +150° C

max. 150 ° C

THERMAL RESISTANCE

From junction to ambient*

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter cut–off current

VBE = 0; VCE = 32 V

VBE = 0; VCE = 32V; Tamb = 150°C

Emitter–base cut–off current

IC = 0; VEB = 4 V

Saturation voltages

at IC = 10 mA; IB = 0,25 mA

Rth j–a =

500 K/W

ICES <

ICES <

20 nA

20 mA

IEB0 <

20 nA

VCEsat 0,05 to 0,35 V

VBEsat 0,6 to 0,85 V

at IC = 50 mA; IB = 1,25 mA

VCEsat 0,1 to 0,55 V

VBEsat 0,7 to 1,05 V

Transition frequency at f = 100 MHz ·

IC = 10 mA; VCE = 5 V

fT

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10V

Cc

Emitter capacitance at f = 1 MHz

IC = Ic = 0; VEB = 0,5 V

Ce

Noise figure at RS = 2 kW

IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz

F

D.C. current gain

VCE = 5 V; IC = 10 mA

VCE = 5 V; IC: 2 mA

BCW60A 60B

hFE

>

hFE

>

<

–

20

120 180

220 310

VCE = 1 V; IC: 50 mA

hFE

Input impedance

VCE = 5 V; IC = 2 mA, f = 1 kHz hie

>

50 70

typ. 2,7 3,6

>

typ.

typ.

typ.

typ.

<

60C

40

250

460

90

4,5

125 MHz

250 MHz

2,5 pF

8 pF

2 dB

6 dB

60D

100

380

630

100

7,5 kW

Continental Device India Limited

Data Sheet

Page 2 of 3

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