BCW60D Просмотр технического описания (PDF) - Continental Device India Limited
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BCW60D Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW60A BCW60B
BCW60C BCW60D
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f = 100 MHz
VCE = 5 V; IC = 10 mA
Noise figure at f = 1 kHz
VCE = 5V; IC = 200 mA; B = 200Hz
VCES
VCE0
IC
Ptot
Tj
max.
max.
max.
max.
max.
32 V
32 V
200 mA
250 mW
150 ° C
fT
typ. 250 MHz
F
typ.
2 dB
Continental Device India Limited
Data Sheet
Page 1 of 3
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