BCW30 Просмотр технического описания (PDF) - STMicroelectronics
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BCW30 Datasheet PDF : 4 Pages
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BCW30
THERMAL DATA
Rthj- amb • Thermal Resistance Junction-Ambient
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max
420
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V Tj = 100 oC
V(BR)CES ∗ Collect or-Emitter
Breakdown Voltage
(VBE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = -10 µA
IC = -2 mA
IC = -10 µA
IC = -10 µA
IC = -10 mA IB = -0.5 mA
IC = -50 mA IB = -2.5 mA
VBE(s at)∗
V BE(o n )∗
Co lle ct or- Bas e
Saturation Voltage
Base-Emitter O n
Voltage
IC = -10 mA
IC = -50 mA
IC = -2 mA
IB = -0.5 mA
IB = -2.5 mA
VCE = -5 V
hFE∗ DC Current G ain
IC = -10 µA
IC = -2 mA
VCE = -5 V
VCE = -5 V
fT
Transit ion F requency IC = -10 mA VCE = -5 V f = 100 MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1MHz
NF Noise Figure
IC = -0.2mA VCE = -5 V
∆f = 200 Hz Rg = 2KΩ
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
f = 1KHz
Min.
-32
-32
-32
-5
-0.6
215
Typ .
-0.18
-0.72
-0.81
150
150
M a x.
-100
-10
-0.3
-0.75
500
7
10
Unit
nA
µA
V
V
V
V
V
V
V
V
V
MHz
dB
dB
2/4
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