ACS108-6SN Просмотр технического описания (PDF) - STMicroelectronics
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ACS108-6SN Datasheet PDF : 11 Pages
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Characteristics
ACS108-6S
Figure 3.
Relative variation of junction to
ambient thermal impedance vs
pulse duration and package
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature
K=[Zth(j-a)/Rth(j-a)]
1.E+00
1.E-01
TO-92
SOT-223
1.E-02
1.E-03
1.E-02
1.E-01
tP (S)
1.E+00 1.E+01 1.E+02 1.E+03
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.8
2.6
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
IL & IH
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 5.
Non repetitive surge peak on-state Figure 6.
current vs number of cycles
Non repetitive surge peak on-state
current for a sinusoidal pulse with
width tp<10 ms, and corresponding
value of I²t (Tj initial = 25 °C
ITSM(A)
10
9
8
7
Non repetitive
Tj initial = 25 °C
6
5
4
Repetitive
3
Tamb = 75 °C
2
1
0
1
10
t=20ms
One cycle
ITSM(A), I²t (A²s)
1.E+03
1.E+02
1.E+01
1.E+00
Number of cycles
100
1000
1.E-01
0.01
tp(ms)
0.10
Tj initial=25°C
ITSM
I²t
1.00
10.00
4/11
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