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SNRVBD660CTT4G Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
SNRVBD660CTT4G
ONSEMI
ON Semiconductor ONSEMI
SNRVBD660CTT4G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRD620CT, NRVBD620VCT, SBRV620CT Series
TYPICAL CHARACTERISTICS
8.0
RATED VOLTAGE APPLIED
7.0
RqJC = 6°C/W
6.0
TJ = 150°C
5.0
SINE
4.0
WAVE
OR
dc
3.0
SQUARE
WAVE
2.0
1.0
0
80 90 100 110 120 130 140 150 160
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
4.0
TJ = 150°C
3.5
3.0
2.5
2.0 VR = 25 V
1.5
VR = 60 V
1.0
RqJA = 80°C/W
SURFACE MOUNTED ON MIN.
PAD SIZE RECOMMENDED
dc
SQUARE WAVE
OR
SINE WAVE
0.5
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient, Per Leg
1K
100
TJ = 25°C
10
0
10
20
30
40
50
60
70
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance, Per Leg
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