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MBR1660PT Просмотр технического описания (PDF) - Diode Semiconductor Korea

Номер в каталоге
Компоненты Описание
производитель
MBR1660PT
DSK
Diode Semiconductor Korea DSK
MBR1660PT Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
MBR1635PT - - - MBR1660PT
FIG.1 -- FORWARD CURRENT DERATING CURVE
20
Resistive or inductive Load
16
12
8
4
0
0
50
100
150
CASE TEMPERATURE
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PERLEG
175
150
125
100
75
50
25
1
TJ=TJmax.
8.3ms Single Half Sine Wave
(JEDEC Method)
10
100
111
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC PERLEG
40
10
TJ=125
1
Pulse Width=300µs
1% Duty Cycle
TJ=25
0.1
MBR1635PT-MBR1645PT
0.01
MBR1650PT-MBR1660PT
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
40
10
1
0.1
0.01
0.0010
TJ=125
TJ=75
MBR1635PT-MBR1645PT
MBR1650PT-MBR1660PT
20
40
60
TJ=25
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
www.diode.kr

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