MBR16100 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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производитель
MBR16100 Datasheet PDF : 2 Pages
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MBR1635 thru MBR16150
Pb Free Plating Product
MBR1635 thru MBR16150
Pb
16.0 Ampere Heatsink Type Single Schottky Barrier Rectifiers
Features
※ Low power loss, high efficiency
※ Guardring for overvoltage protection
※ High surge current capability
※ Compliant to RoHS Directive 2011/65/EU and WEEE 2002/96/EC
※ Halogen-free according to IEC 61249-2-21 definition(Order Note)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※ Case: Heat sink TO-220AC
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
※ Weight: 2.0 gram approximately
TO-220AC/TO-220-2L
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit:inch(mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 MBR16100 MBR16150 UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFRM
IFSM
Peak repetitive reverse surge current (Note 1) IRRM
1.0
Maximum instantaneous forward voltage
(Note 2) IF=16A, TJ=25℃
VF
IF=16A, TJ=125℃
0.63
0.57
Maximum reverse current @ rated VR
TJ=25 ℃
IR
TJ=125 ℃
0.5
15
Voltage rate of change (Rated VR)
dV/dt
16
32
150
0.75
0.65
0.5
10
10000
0.5
0.85
0.75
0.3
7.5
A
A
A
A
0.95
0.92
V
0.1
5
mA
V/μs
Typical thermal resistance
RθJC
3
℃/W
Operating junction temperature range
TJ
- 55 to +150
℃
Storage temperature range
TSTG
- 55 to +150
℃
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
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http://www.thinkisemi.com/
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