MBRF1045CT Просмотр технического описания (PDF) - Inchange Semiconductor

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MBRF1045CT

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

MBRF1045CT

FEATURES

·Schottky Barrier Chip

·Guard Ring Die Construction for Transient Protection

·Low Power Loss/High Efficiency

·High Surge Capability

·High Current Capability，Low Forward Voltage Drop

·Plastic Material：UL Flammability

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for low-voltage,high frequency inverters,free wheeling

and polarrity protection applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

VRWM

VR

VR(RMS)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltag

45

V

31.5

V

IF(AV)

Average Rectified Forward Current

(Rated VR) TC= 125℃

10

A

Nonrepetitive Peak Surge Current

IFSM

(Surge applied at rated load conditions half-

150

A

wave, single phase, 60Hz)

TJ

Junction Temperature

-65~150 ℃

Tstg

Storage Temperature Range

-65~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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