MBRF1060CT Просмотр технического описания (PDF) - Diode Semiconductor Korea
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MBRF1060CT Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
MBRF1030CT --- MBRF10100CT
FIG.1 -- PEAK FORWARD SURGE CURRENT
125
100
75
50
25
0
1
8.3ms Single Half Sine Wave
TJ=125
10
100
NUMBER OF CYCLES AT 60HZ
FIG.2 -- FORWARD DERATING CURVE
10
8
6
4
2
0
25
50
75
100
125
150
CASE TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
20
10
MBRF1030CT-MBRF1045CT
MBRF1090CT-MBRF10100CT
MBRF1050CT-MBRF1060CT
1.0
0.1
.3 .4
.5 .6 .7
Pulse width=300µ s
1% Duty Cycle
.8 .9 1.0 1.1 1.2 1.3
10
MBRF1090CT-MBRF10100CT
MBRF1030CT-MBRF1060CT
1
MBRF1030CT-
MBRF10100CT
.1
TC=125℃
.01
TC=25℃
0
20
40
60
80
100 120
140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
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