CAT24C21 Просмотр технического описания (PDF) - ON Semiconductor

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CAT24C21

1 kb Dual Mode Serial EEPROM for VESA “Plug-and-Play”

ON Semiconductor 

CAT24C21

Table 1. ABSOLUTE MAXIMUM RATINGS

Parameters

Ratings

Units

Temperature Under Bias

–55 to +125

°C

Storage Temperature

–65 to +150

°C

Voltage on Any Pin with Respect to Ground (Note 1)

VCC with Respect to Ground

Package Power Dissipation Capability (TA = 25°C)

Lead Soldering Temperature (10 secs)

–2.0 to +VCC +2.0

V

–2.0 to +7.0

V

1.0

W

300

°C

Output Short Circuit Current (Note 2)

100

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC

voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.

2. Output shorted for no more than one second.

Table 2. RELIABILITY CHARACTERISTICS

Symbol

Parameter

Reference Test Method

Min

NEND (Notes 3 and 4) Endurance

MIL−STD−883, Test Method 1033

1,000,000

TDR (Note 3)

Data Retention

MIL−STD−883, Test Method 1008

100

VZAP (Note 3)

ESD Susceptibility

MIL−STD−883, Test Method 3015

2000

ILTH (Notes 3 and 5) Latch−up

JEDEC Standard 17

100

3. This parameter is tested initially and after a design or process change that affects the parameter.

4. Page Mode, VCC = 5 V, 25°C

5. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V.

Units

Program/Erase Cycles

Years

Volts

mA

Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 2.5 V to 5.5 V, unless otherwise specified. Industrial temperature range.)

Symbol

Parameter

Test Conditions

Min

Max

Units

ICC

Power Supply Current

fSCL = 400 kHz

ISB (Note 6) Standby Current

VIN = GND or VCC

ILI

Input Leakage Current

VIN = GND to VCC

ILO

Output Leakage Current

VOUT = GND to VCC

VIL

Input Low Voltage

VIH

Input High Voltage

VOL1

Output Low Voltage

VCC = 3.0 V, IOL = 3 mA

VIL

Input Low Voltage (VCLK)

VCC ≥ 2.7 V

VIH

Input High Voltage (VCLK)

6. Maximum standby current (ISB) = 10 mA for the Extended Automotive temperature range.

2

mA

1

mA

10

mA

10

mA

−1

VCC x 0.3

V

VCC x 0.7 VCC + 0.5

V

0.4

V

0.8

V

2.0

V

Table 4. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)

Symbol

Parameter

Conditions

Min

CI/O (Note 7) Input/Output Capacitance (SDA)

VI/O = 0 V

CIN (Note 7) Input Capacitance (VCLK, SCL)

VIN = 0 V

7. This parameter is tested initially and after a design or process change that affects the parameter.

Max

Units

8

pF

6

pF

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