ST230S Просмотр технического описания (PDF) - Inchange Semiconductor
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ST230S Datasheet PDF : 2 Pages
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ST230S
Phase Control Thyristors
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
0.105
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VTM
Forward Voltage Drop
IDRM
Max. peak reverse and off-state
IRRM
leakage current
IGT
DC gate current required to trigger
VGT
DC gate voltage required to trigger
tq
Typical turn-off time
PACKAGE OUTLINE
Dimensions in mm (1mm = 0.0394“)
CONDITIONS
TYPE MAX
Ipk = 720 A, TJ = 125 ℃, tp = 10 ms sine
pulse
TJ = TJ maximum, rated VDRM/VRRM
applied
TJ = -40 ℃
180
TJ = 25 ℃
90
TJ = 125 ℃
40
TJ = -40 ℃
2.9
TJ = 25 ℃
1.8
TJ = 125 ℃
1.2
ITM = 300A, TJ = TJ max, di/dt = 20A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0V 100
Ω, tp = 500μs
1.55
30
150
3
100
UNIT
V
mA
mA
V
µs
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