2N5605 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N5605 Datasheet PDF : 2 Pages
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<~!>£.m.l-L.on.au.cto'i
, June.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5605
DESCRIPTION
• DC Current Gain-
: hFE= 70-200@lc= -2.5A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage-
: VCECXSUSP -60V(Min)
• Complement to Type 2N5606
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
""^ /'
-<
2
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-66 package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-5
A
PC
Collector Power Dissipation@Tc=25°C
25
W
Tj
Junction Temperature
150
r
Tstg
Storage Temperature
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
'"Mh j-c Thermal Resistance, Junction to Case
MAX UNIT
6.0
"C/W
1 t--N-H
I
I : 1 1 1 1 r
-JU-D I PL Lf
J—&-S-—<i r V-.
{*- L-*
^3
\ ^\ ^ / \ ct
iB
t
?sL. _/
\l 1
'-
iniii
DIM MIN MAX
A 31 40 31.30
B ^7.30
C 6.70
D 0.70
E 1.40
17.70
7.10
0.90
1.60
G
5.08
K
2.54
K 9.30 10.20
L 14.70 14.90
N 12.40 12.60
p 3.60 3.80
II 24.30 24.50
V 3.50 3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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