2N6497 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2N6497 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6497
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=2A
VBEsat-1 Base-emitter saturation voltage
IC=2.5A; IB=0.5A
VBEsat-2 Base-emitter saturation voltage
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ;IB=2A
VCE=250V;VBE=-1.5V
VCE=175V;VBE=-1.5V;TC=100
VEB=6V; IC=0
hFE-1
DC current gain
IC=2.5A ; VCE=10V
hFE-2
DC current gain
IC=5A ; VCE=10V
fT
Transition frequency
IC=250mA ; VCE=10V;f=1MHz
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=2.5A, IB1=-IB2=0.5A
VCC=125V
MIN TYP. MAX UNIT
250
V
1.0
V
5.0
V
1.5
V
2.5
V
1.0
10
mA
1.0
mA
10
75
3
5.0
1.0
µs
2.5
µs
1.0
µs
2
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