2N3057A Просмотр технического описания (PDF) - M/A-COM Technology Solutions, Inc.

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производитель

2N3057A

NPN Low Power Silicon Transistor

M/A-COM Technology Solutions, Inc. 

2N3057A, 2N3700, 2N3700UB

NPN Low Power Silicon Transistor

Absolute Maximum Ratings

Ratings

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current

Total Power Dissipation

@ TA = 25°C2

@ TC = 25°C3

Operating & Storage Temperature Range

2. Derate linearly @ 2.85 mW / °C for TA = 25 °C

3. Derate linearly @ 10.3 mW / °C for TC = 25 °C

Symbol

VCEO

VCBO

VEBO

IC

PT

TOP, TSTG

Thermal Characteristics

Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Symbol

RθJC

RθJA

Rev. V1

Value

80 V

140 V

7V

1A

0.5 W

1.0 W

-65°C to +200°C

Max. Value

150°C/W

325°C/W

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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