2N3057A Просмотр технического описания (PDF) - M/A-COM Technology Solutions, Inc.
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2N3057A Datasheet PDF : 5 Pages
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2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Features
JANS Qualified to MIL-PRF-19500/391
2N3700 & 2N3700UB available in JANSR
JEDEC registered 2N3700, 2N3057
Lightweight & Low Power
Ideal for Space, Military, & other High Reliability
Applications
TO-18 (TO-206AA), TO-46 (TO-206AB) Surface
Mount UB Package Styles Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Test Conditions
IC = 30 mA
Symbol Units Min.
Max.
V(BR)CEO V
80
—
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
VBC = 140 V
VEB = 7 V
VCE = 90 V
VEB = 5 Vdc
IC = 150 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
ICBO
µA
—
10
IEBO1 µA
—
10
ICES
nA
—
10
IEBO2 nA
—
10
100
300
HFE
-
90
50
—
300
15
—
VCE(SAT) Vdc
—
0.2
0.5
VBE(SAT) Vdc
—
1.1
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 A, VCE = 5 V, f = 1 kHz
HFE
80
400
Magnitude ofSmall-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz
| HFE |
5
20
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO
VCB = 0.5 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz CIBO
pF
—
12
60
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 10 ms
VCE = 10 V, IC = 180 mA
VCE = 40 V, IC = 50 mA
VCE = 80 V, IC = 15 mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
1
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