2N3700 Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
2N3700 Datasheet PDF : 3 Pages
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NPN 2N3700
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICBO
IEBO
VCEO (*)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
VCB=90 V, IE=0V
VCB=90 V, IE=0V, Tj=150°C
VBE=5.0 V, IC=0
IC=30 mA, IB=0
VCBO
Collector Base
Breakdown Voltage
IC=100 µA, IE=0
VEBO
Emitter Base Breakdown
Voltage
IE=100 µA, IC=0
IC=0.1 mA, VCE=10 V
IC=10 mA, VCE=10 V
hFE (*)
DC Current Gain
VCE(SAT) (*)
Collector-Emitter
saturation Voltage
VBE(SAT) (*)
Base-Emitter saturation
Voltage
IC=150 mA, VCE=10 V
IC=500 mA, VCE=10 V
IC=1A, VCE=10 V
IC=150 mA, VCE=10 V
Tamb = -55°
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=150 mA, IB=15 mA
fT
Transition frequency
IC=50 mA, VCE=10 V
f= 20MHz
hfe
Small signal current gain
IC=1 mA, VCE=5.0 V
f= 1 KHz
CCBO
Collector-Base
Capacitance
IE= 0 ,VCB=10 V
f = 1MHz
CEBO
Emitter-Base
Capacitance
IC= 0 ,VEB=0.5 V
f = 1MHz
rbb’,Cb’c
Feedback time constant
IC=10 mA, VCE=10 V
f= 4 MHz
(*) Pulse conditions : tp < 300 µs, δ =1%
Min Typ Max Unit
-
- 10 nA
-
- 10 µA
-
- 10 nA
80 -
-
V
140 -
-
V
7
-
-
V
50 -
-
90 -
-
100 - 300
50 -
-
-
15 -
-
40 -
-
-
- 0.2
-
-
0.5
V
-
- 1.1
- 100 - MHz
80 - 400 -
- 12 - pF
- 60 - pF
25 - 400 ps
17/10/2012
COMSET SEMICONDUCTORS
2|3
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