2N4901 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N4901 Datasheet PDF : 2 Pages
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tSe.mL-Cond.uctoi iPtoc/uch,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
COMPLEMENTARY SILICON TRANSISTORS
General Purpose use In power amplifier and switching circuits.
FEATURES:
•DC Current Gain Specified
HFE=20-80®IC=1.0A
* Low Collector-Emitter Saturation Voltage -
vCE<«rt) = 1-5 V (Max.) O 'c * 5-0A
MAXIMUM RATINGS
Characteristic
Symbol 2N4901 2N4902 2N4903 Unit
2N5087 2N5068 2N6069
PNP
2N4901
2N4902
2N4903
NPN
2N5067
2N5068
2N5069
5.0 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-80 Volts
87.5 Watts
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Vc*>
40
60
VCEO
40
60
VEB
5.0
80
V
80
V
V
Collector Current-Continuous
'c
-Peak
5.0
A
10
TO-3
Base current - Continuous
IB
Total Rower Dissipation QTC=25°C PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
T,,T,TO
THERMAL CHARACTERISTICS
Characteristic
SymboI
Thermal Resistance Junction to Case Rejc
1.0
87.5
0.5
- 65 to +200
Max
2.0
100
» 87.5
|62.5
a 50
Q 37.5
OL
% 25
£. 12.5
0
°- o
FIGURE -1 POWER DERATING
51"\
's
\
^x.s
25 50 75 100 125 150 175 200
TC,TEMPERATUREC>C)
A
W
W/°C
°C
Unit
°c/w
B
c
±o—t o
D
JU
H
i& £r i
T 3 ^i ^^-, I
^.-^
A
PM1.BA3E
2.EMTTER
COLLECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
7.98 928
D 11.18 12,19
E 25.20 26.67
F
0.92 1.06
G
1.38 1.82
H 29.90 30.40
1 16.64 17.30
J
3.88 4.36
K 10.67 11.18
N s m NJ Semi-Conductors reserves the right to change test conditions, parameters limi
press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its u N I
Sem,-C onductors encourages customers to verify that datasheets are current before placing orders
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