2N6667 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2N6667

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2N6667

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA, IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA

VCE(sat)-2 Collector-Emitter Saturation voltage IC= -10A ,IB= -100mA

VBE(on)-1 Base-Emitter On Voltage

IC= -5A ; VCE= -3V

VBE(on)-2 Base-Emitter On Voltage

IC= -10A ; VCE= -3V

ICEO

Collector Cutoff Current

VCE= -60V, IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -5A ; VCE= -3V

hFE-2

DC Current Gain

IC= -10A ; VCE= -3V

COB

Output Capacitance

IE= 0; VCB= -10V,ftest= 1MHz

MIN TYP. MAX UNIT

-60

V

-2.0 V

-3.0 V

-2.8 V

-4.5 V

-1 mA

-5 mA

1000

100

200 pF

SPTECH website：www.superic-tech.com

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