2N6667 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

2N6667

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -5A

·Complement to Type 2N6387

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

Base Current-DC

Collector Power Dissipation

PC

TC=25℃

Collector Power Dissipation

Ta=25℃

Tj

Junction Temperature

-250

mA

65

W

2

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

1.92 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

2N6667

SPTECH website：www.superic-tech.com

1

Share Link: