2N4918 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N4918

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -40V(Min)

·Low Collector Saturatioin Voltage-

: VCE(sat)= -0.6V(Max.)@ IC= -1A

·Wide Area of Safe Operation

·Complement to Type 2N4921

APPLICATIONS

·Designed for driver circuits, switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1

A

ICM

Collector Current-Peak

-3

A

IB

Collector Current-Continuous

-1

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W

SPTECH website：www.superic-tech.com

2N4918

1

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