2N3054A Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2N3054A

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCER

Collector-Emitter Sustaining Voltage IC= 500mA; RBE= 100Ω

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 0.5A; VCE= 4V

ICEO

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 30V; IB= 0

VCE= 90V; VBE(off)= 1.5V

VCE= 90V; VBE(off)= 1.5V,TC=150℃

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 4V

hFE-2

DC Current Gain

IC= 3A; VCE= 4V

fT

Current Gain-Bandwidth Product

IC= 0.2A; VCE= 10V; f=1.0MHz

2N3054A

MIN MAX UNIT

55

V

60

V

1.0

V

6.0

V

1.7

V

0.5

mA

1.0

6.0

mA

1.0

mA

25

150

5

3

MHz

SPTECH website：www.superic-tech.com

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