2N5614 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

2N5614

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

ICEO

Collector Cutoff Current

VCE= 60V; IB= 0

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 2.5A ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V

2N5614

MIN MAX UNIT

60

V

1.5

V

2.2

V

1.0

mA

0.1

mA

0.1

mA

70

200

70

MHz

SPTECH website：www.superic-tech.com

2

Share Link: