2N5737 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N5737 Datasheet PDF : 2 Pages
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J
C/
!_/
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5737
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VcEOfsusp -60V(Min.)
• Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ lc= -5A
• Wide Area of Safe Operation
APPLICATIONS
• Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIJ
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IOM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100°C
Tj
Junction Temperature
-4
A
50
W
150
•c
Tstg
Storage Temperature
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.5
UNIT
°c/w
PIN 1.BASE
2.ailTTER
3. COLLECT OR (CASE)
TO-3 package
HHn
DIM MM MAX
A
39 00
B 25.30 26.67
C.
7.80
8.30
0
0.90 1.10
E
MO 1.60
$
1092
H
S4S
•S
11.40 13.50
I 1675 1705
H 19.40 19.62
(J
4.00 4.JO
U ^jflo 3020
V
4JO 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliableat the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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