2N6672 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N6672

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

2N6672

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

350

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

1.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 4A

2.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.6

V

IEBO

Emitter Cutoff Current

VEB= 8.0V; IC= 0

2.0 mA

hFE

DC Current Gain

IC= 5A ; VCE= 3V

10

40

fT

Current Gain-Bandwidth Product

IC= 0.2A ; VCE= 10V

15

60 MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=0.1MHz

50 300 pF

Switching times

td

Delay Time

0.1 μs

tr

Rise Time

ts

Storage Time

IC= 5A; VCC= 125V; IB1= -IB2= 1A; tp=20μs

0.5 μs

2.5 μs

tf

Fall Time

0.4 μs

SPTECH website：www.superic-tech.com

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