2N4914 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N4914

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 2.5A; VCE= 2V

ICEO

Collector Cutoff Current

VCE= 60V; IB= 0

ICBO

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= 60V; IE= 0

VCE= 60V; VBE(off)= -1.5V

VCE= 60V; VBE(off)= -1.5V, TC=150℃

VEB=-5V; IC= 0

hFE-1

DC Current Gain

IC= 2.5A; VCE= 2V

hFE-2

DC Current Gain

IC= 5A; VCE= 2V

fT

Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; ftest= 1.0MHz

2N4914

MIN MAX UNIT

60

V

1.0

V

1.5

V

1.4

V

1.0

mA

0.1

mA

0.1

2.0

mA

1.0

mA

25

100

7

4

MHz

SPTECH website：www.superic-tech.com

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