2N4914 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2N4914

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@ IC= 5A

·DC Current Gain-

: hFE= 25-100 @IC= 2.5A

·Complement to Type 2N4905

APPLICATIONS

·Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation@TC=25℃

87.5

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.0 ℃/W

SPTECH website：www.superic-tech.com

2N4914

1

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